1. Material Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms set up in a tetrahedral lattice, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting extraordinary atomic bond stamina.
The Si– C bond, with a bond power of around 318 kJ/mol, is amongst the strongest in architectural porcelains, providing impressive thermal security, hardness, and resistance to chemical strike.
This durable covalent network results in a product with a melting factor surpassing 2700 ° C(sublimes), making it among one of the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC maintains mechanical stamina and creep resistance at temperatures above 1400 ° C, where numerous metals and standard porcelains start to soften or break down.
Its low coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) allows quick thermal cycling without disastrous fracturing, a critical quality for crucible performance.
These intrinsic properties stem from the balanced electronegativity and similar atomic dimensions of silicon and carbon, which advertise an extremely stable and largely packed crystal framework.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are usually produced from sintered or reaction-bonded SiC powders, with microstructure playing a crucial function in longevity and thermal shock resistance.
Sintered SiC crucibles are created through solid-state or liquid-phase sintering at temperatures above 2000 ° C, usually with boron or carbon ingredients to boost densification and grain limit cohesion.
This process generates a completely thick, fine-grained framework with marginal porosity (
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