Under the spread of the new crown epidemic, after Americans experienced life and death, they set off the largest "resignation wave" in history, and the number of resignations broke the highest record since statistics began in 2000. Since April this year, more than 4 million people in the United States have voluntarily resigned each month. In August, the number of resignations exceeded 4.27 million, and in November, it rose to 4.4 million. The operation of society is linked. The large number of departures in the United States has led to a large shortage of labor; and the shortage of a large number of labor has directly led to the supply chain crisis in the United States; the supply chain crisis has directly affected prices and prices in the United States. The economy has a direct effect on people's lives.
The economic downturn will affect the market demand for AlN powder.
Aluminum Nitride Research History
Aluminum nitride is a kind of ceramic material with excellent comprehensive performance, and its research can be traced back more than 100 years ago. It was discovered by F. Birgeler and A. Gutter in 1862, and synthesized by J.W. Mallets for the first time in 1877, but there was no practical application in the following 100 years. It was used as fertilizer only as a nitrogen-fixing agent.
Aluminum nitride is a covalent compound with a low self-diffusion coefficient and high melting point, which makes it difficult to sinter. It was not until the 1950s that the first aluminum nitride ceramics were successfully made and used as refractory materials in the smelting of pure iron, aluminum, and aluminum alloys. Since the 1970s, with the deepening of research, the preparation technology of aluminum nitride has become increasingly mature, and its application scope has also been expanding. Especially since the 21st century, with the rapid development of microelectronics technology, electronic machine, and electronic components is toward miniaturization, light-duty, integration, as well as the development direction, such as high reliability and high power output, more and more complex heat dissipation device to the substrate and packaging material put forward higher request, to further promote the vigorous development of the industry of aluminum nitride.
Aluminum Nitride Characteristics
Aluminum nitride (AlN) is a hexagon wurtzite covalent bond compound with lattice parameters A =3.114, C =4.986. Pure aluminum nitride is blue-white, usually gray or off-white, and is a typical iii-ⅴwide bandgap semiconductor material.
Aluminum nitride (AlN) has the characteristics of high strength, high volume resistivity, high insulation and pressure resistance, thermal expansion coefficient, and a good match with silicon, not only used as a sintering agent or strengthening phase of structural ceramics, especially in the field of ceramic electronic substrate and packaging materials in recent years, its performance is far superior to alumina.
Aluminum Nitride Thermal Conductivity Mechanism
Of the series of important properties of aluminum nitride, the most remarkable is its high thermal conductivity. A great deal of research has been done on the thermal conductivity mechanism of aluminum nitride, and a relatively perfect theoretical system has been formed. The main mechanism is heat transfer through lattice or lattice vibration, that is, by lattice wave or thermal wave. The results of quantum mechanics tell us that lattice waves can be treated as the motion of a particle, the phonon. Thermal waves also have wave-particle duality. Thermal phonons transfer heat through mutual restriction and coordination of vibrations among structural elements (atoms, ions, or molecules). If the crystal is a non-elastic body with a perfect structure, the heat can be transferred freely from the hot end of the crystal to the cold end without any interference and scattering, and the thermal conductivity can reach a very high value. The thermal conductivity is mainly controlled by crystal defects and phonon scattering.
The theoretical thermal conductivity of AlN can reach 320W·m-1·K-1, but the actual thermal conductivity of AlN is less than 200W·m-1· k-1 due to impurities and defects in AlN. This is mainly because the structural elements in the crystal cannot have a completely strict uniform distribution, and there are always different sparse and dense regions, so the current-carrying phonons will always be interfered with and scattered in the propagation process.
Aluminum Nitride Price
The price is influenced by many factors including the supply and demand in the market, industry trends, economic activity, market sentiment, and unexpected events.
If you are looking for the latest AlN price, you can send us your inquiry for a quote. ([email protected])
Aluminum Nitride Supplier
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality chemicals and Nanomaterials, including silicon powder, nitride powder, graphite powder, zinc sulfide, calcium nitride, 3D printing powder, etc.
If you are looking for high-quality aluminum nitride, please feel free to contact us and send an inquiry. ([email protected])
Cancer cells can "stretch out a big hand" and take away the mitochondria of immune cells. The Harvard Medical School research team cultured mouse and human breast cancer cells and immune cells, such as killer T cells, and used field emission scanning electron microscopy (FESEM) to observe the relationship between cancer cells and immune cells. interactive. Interestingly, they found that cancer cells stick out long nanotubes, typically within 100-1000 nanometers in diameter, each of which connects to multiple immune cells along the way. The researchers used the drug L-778123, which inhibits the formation of nanotubes, for treatment. The higher the concentration of L-778123, the better the treatment effect.
It is used in various high-tech fields, so the market demand for AlN powder will continue to rise. We are a quality supplier of AlN powder, please feel free to contact us.
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